Effect of bias-enhanced nucleation on the microstructure and thermal boundary resistance of GaN/SiN x /diamond multilayer composites
Yiming Wang,Bing Zhou,Guoliang Ma,Jiaqi Zhi,Chao Yuan,Hui Sun,Yong Ma,Jie Gao,Yongsheng Wang,Shengwang Yu
DOI: https://doi.org/10.1016/j.matchar.2023.112985
IF: 4.537
2023-05-14
Materials Characterization
Abstract:The low effective thermal boundary resistance (TBR eff ) at the GaN/diamond interface is very important for the development of high-power, high-frequency and high-temperature GaN-on-diamond devices. The nucleation and growth of diamond are key processes for modulating the TBR eff . This work proposed the bias enhanced nucleation technique to adjust the nucleation of GaN/SiN x /diamond multilayer composites in the MPCVD process at different bias voltages (400–700 V), thereby adjusting TBR eff . Pulse bias is beneficial to a stable plasma environment and to obtain a complete GaN/diamond interface structure. The transient thermoreflectance characterization indicated that the GaN/SiN x /diamond multilayer composite prepared under 700 V bias nucleation condition had the lowest TBR eff (26 ± 10 m 2 K/GW), whereas the GaN/SiN x /diamond multilayer composite at 600 V bias had the highest TBR eff (83 ± 18 m 2 K/GW). The role of bias enhanced nucleation process in the TBR eff was systematically analyzed by electron microscopies (TEM and SEM) and Raman spectroscopy. The GaN/SiN x /diamond multilayer composite prepared at 600 V showed a thick mixed transition layer containing multiphase structures and rough interfaces due to efficient subsurface ion implantation, resulting in high TBR eff . In contrast, at 700 V, a thinner nucleation zone and smoother interface result in the lowest TBR eff . This work demonstrated the potential of adjusting TBR eff at the GaN/diamond interface by using bias enhanced nucleation technique to modulate the diamond nucleation and growth processes.
materials science, multidisciplinary,metallurgy & metallurgical engineering, characterization & testing