Abstract:We report the synthesis of highly oriented diamond (HOD) (111) films on 3C-SiC/Si (111) substrates. Bias-enhanced nucleation (BEN) is a key process for the heteroepitaxial growth of HOD films. Conventional long nucleation periods have been found to lead to a polycrystalline diamond film on the 3C-SiC (111) surface. Here, we propose a method that combines brief BEN (<30 s), called pulse BEN, and epitaxial grain selection by oxidative etching. Smaller diamond nuclei with a higher spatial density on the substrate were formed by pulse BEN with a pulse duration of <30 s. We found that precisely controlling the pulse duration is important for obtaining a nucleation density that is sufficiently high to obtain the HOD films. By adding oxygen gas to the subsequent growth process, non-epitaxial nuclei were removed and epitaxial diamond grains selectively remained. There was no notable difference in the relative growth rate of [111] to [100] with and without oxygen, and the orientation improvement was observed on both the (100) and (111) substrates. This suggests that the mechanism of oxidative removal was not evolutionary selective growth, but etching of the non-epitaxial interfaces between the nuclei and the (111) substrate. Finally, the HOD (111) films covering the entire 3C-SiC surface were synthesized, and they exhibited distinct diffraction spots, indicating the formation of the oriented diamond.

Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Deposition of (100) and (110) Textured Diamond Films on Aluminum Nitride Ceramics via Hot Filament Chemical Vapor Deposition

Experimental Approach to the Mechanism of the Negative Bias Enhanced Nucleation of Diamond on Si Via Hot Filament Chemical Vapor Deposition

Chemical Vapor Deposition of <110> Textured Diamond Film through Pre-Seeding by Diamond Nano-Sheets

Growth of well-adhered and smooth diamond thin films on fused silica substrates

High Quality Heteroepitaxial Diamond Films On Silicon: Recent Progresses

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Interfaces of CVD diamond films on silicon (001)

(100) Oriented Diamond Film Prepared on Amorphous Carbon Buffer Layer Containing Nano-Crystalline Diamond Grains

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

High quality nanocrystalline diamond films grown by RF-HFCVD

Preparation of HFCVD Spherical Diamond Films and the Effect of Crystal Orientations on Adhesion and Tribological Properties

Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Highly Transparent Nanocrystalline Diamond Films On Quartz Substrates

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

DIAMOND SYNTHESIS WITH HOT FILAMENT CHEMICAL VAPOR DEPOSITION (HFCVD) IN THE PRESENCE OF IRON