Abstract:The efficacy of various non-diamond carbon films as precursors for diamond nucleation on unscratched silicon substrates was investigated with a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were partially coated with various carbonaceous substances such as clusters consisting of a mixture of C60 and C70, evaporated films of carbon and pure C70, and hard carbon produced by a vacuum are deposition technique. For comparison, diamond nucleation on silicon substrates coated with submicrometer-sized diamond particles and uncoated smooth silicon surfaces was also examined under similar conditions. Except for evaporated carbon films, significantly higher diamond nucleation densities were obtained by subjecting the carbon-coated substrates to a low-temperature high-methane concentration hydrogen plasma treatment prior to diamond nucleation. The highest nucleation density (∼3 × 108 cm−2) was obtained with hard carbon films. Scanning electron microscopy and Raman spectroscopy demonstrated that the diamond nucleation density increased with the film thickness and etching resistance. The higher diamond nucleation density obtained with the vacuum are-deposited carbon films may be attributed to the inherent high etching resistance, presumably resulting from the high content of sp3 atomic bonds. Microscopy observations suggested that diamond nucleation in the presence of non-diamond carbon deposits resulted from carbon layers generated under the pretreatment conditions.

Diamond Nucleation on Smooth Si3n4-Coated Substrate

Growth of Diamond Films on Si3n4 Coated Silicon Substrates

Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Discharge Induced Enhancement of Diamond Nucleation on Si Via Hot Filament Chemical Vapor Deposition

Superconducting Diamond on Silicon Nitride for Device Applications

Effect of Silicon Doping in Cvd Diamond Films from Microcrystalline to Nanocrystalline on Wc-Co Substrates

Characteristics of Diamond Crystals Deposited on Quartz Substrates by Chemical Vapor Deposition

Electron-Emission-Enhanced Diamond Nucleation on Si by Hot Filament Chemical Vapor Deposition

NUCLEATION AND GROWTH OF DIAMOND FILM ON POROUS SILICON SUBSTRATE

Experimental Approach to the Mechanism of the Negative Bias Enhanced Nucleation of Diamond on Si Via Hot Filament Chemical Vapor Deposition

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Si-doped Diamond Films Prepared by Chemical Vapour Deposition

Preparation of Diamond Films by Hot Filament Chemical Vapor Deposition and Nucleation by Carbon Nanotubes

Influence of Pretreatments and Deposition Parameters on Diamond Nucleation Density in Diamond Film Deposition by Hot Filament Cvd