Abstract:The surface preparation is a prerequisite for ensuring the required properties of a diamond film formed by gas-phase deposition. The influence of the temperature and concentration of the CuSO 4 etchant on the structural and phase compositions of the surface of hard-alloy materials is considered in this work, and the structural and phase compositions of a continuous polycrystalline diamond film at its growth stages is also considered. The adhesion of the diamond films to the surface of hard-alloy materials is determined qualitatively. It is established that the treatment of the hard-alloy surface in the CuSO 4 solution at t = 23°C leads to the inhomogeneous removal of a cobalt binder with chipping WC grains and the formation of the porous structure in the surface layer of the WC–6% Co alloy. The treatment by the CuSO 4 etchant at t = –2°C provides the homogeneous etching of the Co binder over the boundaries of WC grains and the formation of a chemically homogeneous surface. The orientation growth and adhesion of the diamond film depend on the elemental composition of the WC–Co alloy surface after treatment by the CuSO 4 solution. If the treatment was performed at t sln = 23°C, then the removal of copper from the defect surface WC layer is complicated during the synthesis, which provides the multidirectional growth of diamond crystals in the film along two directions, 〈111〉 and 〈110〉, which causes critical biaxial compressive stresses (2.5 GPa) and leads to low film adhesion to the hard alloy surface. If the treatment is performed at t sln = –2°C, then the orientational growth of diamond crystals in the film occurs in one preferential crystallographic direction 〈111〉, which lowers the biaxial compressive stresses (1.7 GPa) and increases the adhesive bond of the film to the hard alloy surface. The structure imperfection calculated from the ratio of the lines of integrated intensities I 1333 / I 1580 using the Raman spectroscopy method decreases with an increase in concentration at negative temperatures and increases at positive temperatures of the CuSO 4 solution during surface preparation.

Growth of Diamond Films on Si3n4 Coated Silicon Substrates

Preparation of Anti-Reflective and Protective Diamond-Like Carbon Film on Si Substrate by Femto-Second Pulsed Laser Deposition

Diamond Nucleation on Smooth Si3n4-Coated Substrate

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition

A Study of Interface Structure Between Diamond Film and Silicon Substrate

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Structure and Characteristics of Si-coated Diamond Grits

Growth of Diamond Thin Films with Smooth Surface and High Transmittance on Quartz Glass Substrates

Growth Characteristics of diamond films deposited on Si and W substrates

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Crystalline Diamond Growth in Thin Films Deposited from a CH4/Ar Rf Plasma

Highly Transparent Nanocrystalline Diamond Films On Quartz Substrates

Growth Features of Diamond Films on the Tungsten Carbide Surface with a Copper Sublayer

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Tribological Properties Of Diamond-Like Carbon-Films Deposited On Silicon Using Rf Plasma-Enhanced Cvd

Features of the diamond films growth on the tungsten carbide surface by a copper underlayer