Nucleation of Diamond on Silicon Wafers Using C 60 in the Hot Filament Chemical Vapour Deposition System

YJ Fei,X Wang,XJ Wang,YQ Zhou,YY Xiong,KA Feng
DOI: https://doi.org/10.1088/1009-1963/11/3/319
2002-01-01
Abstract:Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth Using C-60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth of diamond films on silicon wafer using C-60 as intermediate layer in HFCVD system is described. In order to increase the density of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is not beneficial for improving the diamond nucleation. The multi-layers of C-60 molecules, but not a monolayer, can increase the density of diamond nuclei in the presence of H atoms.
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