Abstract:The efficacy of various non-diamond carbon films as precursors for diamond nucleation on unscratched silicon substrates was investigated with a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were partially coated with various carbonaceous substances such as clusters consisting of a mixture of C60 and C70, evaporated films of carbon and pure C70, and hard carbon produced by a vacuum are deposition technique. For comparison, diamond nucleation on silicon substrates coated with submicrometer-sized diamond particles and uncoated smooth silicon surfaces was also examined under similar conditions. Except for evaporated carbon films, significantly higher diamond nucleation densities were obtained by subjecting the carbon-coated substrates to a low-temperature high-methane concentration hydrogen plasma treatment prior to diamond nucleation. The highest nucleation density (∼3 × 108 cm−2) was obtained with hard carbon films. Scanning electron microscopy and Raman spectroscopy demonstrated that the diamond nucleation density increased with the film thickness and etching resistance. The higher diamond nucleation density obtained with the vacuum are-deposited carbon films may be attributed to the inherent high etching resistance, presumably resulting from the high content of sp3 atomic bonds. Microscopy observations suggested that diamond nucleation in the presence of non-diamond carbon deposits resulted from carbon layers generated under the pretreatment conditions.

Investigation of Diamond Nucleation under Very Low Pressure in Chemical Vapor Deposition

Achieving High Nucleation Density of Diamond Film under Low Pressures in Hot-Filament Chemical Vapor Deposition

Very Low Pressure Nucleation of Diamond on Mirror-Smooth Silicon in Hot Filament Chemical Vapor Deposition System

Pressure Effect On Diamond Nucleation In A Hot-Filament Cvd System

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Mechanism of Diamond Nucleation Enhancement by Filament Carburization in HFCVD Process

Electron-Emission-Enhanced Diamond Nucleation on Si by Hot Filament Chemical Vapor Deposition

Diamond growth on thin Ti wafers via chemical vapor deposition

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition

Influence of Reaction Pressure on Nucleation Rate of Diamond on Silicon Substrates

Nucleation of Diamond on Silicon Wafers Using C 60 in the Hot Filament Chemical Vapour Deposition System

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Deposition of nano-diamond-like carbon films by an atmospheric pressure plasma gun and diagnostic by optical emission spectrum on the process

Experimental Approach to the Mechanism of the Negative Bias Enhanced Nucleation of Diamond on Si Via Hot Filament Chemical Vapor Deposition

Growth of well-adhered and smooth diamond thin films on fused silica substrates

High quality nanocrystalline diamond films grown by RF-HFCVD

Diamond Nucleation on Smooth Si3n4-Coated Substrate

Deposition conditions for CVD diamond films under low pressure with nitrogen addition