Influence of Pretreatments and Deposition Parameters on Diamond Nucleation Density in Diamond Film Deposition by Hot Filament Cvd

Z SUN,ZH ZHENG,N XU
DOI: https://doi.org/10.1117/12.190719
1994-01-01
Abstract:In synthsis of diamond thin film by Hot Filment Chemical Vapor Deposition (HF-CVD), many factors can affect diamond nucleation. The mechanical pretreatments, scratching with diamond paste or ultrasonic irradiation with diamond powder suspensions, and the chemical pretreatment, such as erosion with a solution of HF-HNO3, can create many defects on the surface of silicon substrate and promote the diamond nucleation density. Also, diamond nucleation density can be promoted with carbide intermediate layer of diamond-like carbon film on polished silicon substrate. Diamond nucleation can be varied with different deposition parameters, among the deposition parameters, CH4/H2 ratio and substrate temperatures influence the diamond nucleation effectively.
What problem does this paper attempt to address?