Abstract:Due to its outstanding mechanical, tribological, electronic transport, chemical and biocompatibility properties, the ultrananocrystalline diamond (UNCD) film grown by a microwave plasma chemical vapor deposition method under hydrogen-poor conditions has become the subject of intense research interests over the recent years [1–3; among others]. As can be found from the open literature, the potential of UNCD has been demonstrated for the applications in nano-technology. To better understand the responses of UNCD films under different conditions, a numerical study has been performed of the specimen size, loading rate, temperature and loading path effects on the material properties of single crystal diamond. A combined kinetic Monte Carlo (KMC) and molecular dynamics (MD) procedure is then developed for large-scale atomistic simulation of the responses of pure and nitrogen-doped UNCD films. In the proposed numerical procedure, two single crystal diamond films, that are formed by the KMC method based on the mechanisms of UNCD growth from carbon dimers on the hydrogen-free (001) surface, are compressed along the [001] direction with two growth surfaces contacting each other at an elevated temperature in the MD simulation box to create a polycrystalline UNCD film with certain grain boundary (GB). The mechanical responses of resulting UNCD film have been investigated by applying displacement-controlled loading conditions in the MD simulation box, and compared with those of single crystal diamond. By randomly adding different numbers of nitrogen atoms into the GBs of these polycrystalline UNCD films, the effects of nitrogen atom number density and GB width on the responses of UNCD have also been studied. Recently, efforts are being made to explore the combined size, rate and thermal effects on the strengths and failure patterns of both pure and nitrogen-doped UNCD films so that a hyper-surface could be formulated for designing UNCD-based MEMS devices. In this presentation, recent advances on multiscale (both spatial and temporal) model-based simulation of the pure and nitrogen-doped UNCD responses under various temperatures will be discussed, which provide a better understanding on the performance of UNCD-based MEMS devices in an extreme loading environment.

Pre-nucleation techniques for enhancing nucleation density and adhesion of low temperature deposited ultra-nanocrystalline diamond

Deposition of Mirror-Like Surface Finish Ultrananocrystalline Diamond Films on Tungsten Carbide by Optimizing the Substrate Pretreatment

High-rate Synthesis of Ultra-Nanocrystalline Diamond in an Argon-Free Hot Filament Chemical Vapor Deposition Atmosphere for Tribological Films

Adhesion Properties of Nitrogen Ion Implanted Ultra-Nanocrystalline Diamond Films on Silicon Substrate

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Influence of Pretreatments and Deposition Parameters on Diamond Nucleation Density in Diamond Film Deposition by Hot Filament Cvd

Synthesis of Nanocrystalline Diamond Films on Smooth Wc-Co Cemented Carbide Substrates

Effects of Tungsten Metal Coatings on Enhancing the Characteristics of Ultrananocrystalline Diamond Films

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Diamond Nucleation on Smooth Si3n4-Coated Substrate

Effect of Nano-Ni Catalyst on the Growth and Characterization of Diamond Films by HFCVD

Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Surface Acoustic Wave Properties of Natural Smooth Ultra-Nanocrystalline Diamond Characterized by Laser-Induced Saw Pulse Technique

Recent Advances in Multiscale Simulation of UNCD Strength

Effects of Pretreatment on Quality and Adhesion of Diamond Films on Cemented Carbides

Deposition and Characterization of Ultra-Smooth Nanocrystalline Diamond Films Using a Graphite-Grid Assisted Hot Filament CVD Method

Effects of urea versus N2 addition on growth and mechanical properties of HFCVD diamond films on WC-Co substrates

Pressure Effect On Diamond Nucleation In A Hot-Filament Cvd System

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition

Si+ Implantation: A Pretreatment Method for Diamond Nucleation on a Si Wafer