Abstract:Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were used to characterize defect states throughout the bandgap of unintentionally-doped InxAl1−xN grown by metal organic chemical vapor deposition for x = 0.18 (nominally lattice-matched) and x = 0.15 compositions. DLTS revealed broad peaks with energy levels of EC − 0.23 eV and 0.38 eV for In0.18Al0.82N and In0.15Al0.85N, respectively, tracking the difference in their conduction band minima [S. Schulz et al., Appl. Phys. Express 6, 121001 (2013)]. Capture kinetics studies revealed logarithmic filling behavior, which with the broad peaks, implies that an extended defect source is likely, consistent with threading dislocation densities (TDD) of ∼1 × 109 cm−2 measured for both structures. However, the trap concentration did not track the detailed TDD variation but instead followed the background oxygen content, which varied between 1.2 × 1018 cm−3 and 1.8 × 1018 cm−3 for the samples. Taken together with the logarithmic capture kinetics, this implies that dislocation-oxygen complexes could be the source for this trap. In spite of the high oxygen content in the samples, this state did not reveal DX-like behavior, supporting the assertion of an oxygen-dislocation complex as its likely source. DLOS also revealed additional states at EC − 1.63 eV, 2.09 eV, and 3.59 eV for In0.18Al0.82N and analogous states at EC − 1.70 eV, 2.70 eV, and 3.90 eV within In0.15Al0.85N. Lighted capacitance-voltage measurements indicated that the near mid-gap (EC − 2.09 eV and 2.70 eV) and near valence band (EC − 3.59 eV and 3.90 eV) states are their primary sources for carrier compensation.

Photo-stimulated Current Spectroscopy and Its Application in Detecting Aluminum Implantation-Induced Deep Traps in GaN

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Deep Level Investigation of INGAAS on INP Layer

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Deep Level Centers in Carbon-Doped High Resistivity GaN

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Identification And Elimination Of Inductively Coupled Plasma-Induced Defects In Alxga1-Xn/Gan Heterostructures

Deep Level Traps in GaN LEDs Grown by Metal Organic Vapour Phase Epitaxy on an 8 Inch Si(111) Substrate

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution

Deep centers inAlGaAs/GaAs GRIN-SCHSQW laser structures grown by MBE and MOCVD

Characterization of Traps in InAlN by Optically and Thermally Stimulated Deep Level Defect Spectroscopies

Investigation of proton irradiation induced E<sub>C</sub>-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

Photo-assisted Capacitance-Voltage Characterization of High-Quality Atomic-Layer-deposited Al2O3∕GaN Metal-Oxide-semiconductor Structures

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

Deep Traps in AlN Hydride Vapor Phase Epitaxy film on Low-Temperature AlN/sapphire