Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Electrical properties of Bi-implanted amorphous chalcogenide films

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Electronic properties of metamorphic GaSbBi films on GaAs

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

n-Type Chalcogenides by Ion Implantation

Effect of Gamma Exposure on Chalcogenide Glass Films for Microphotonic Devices

Microstructures and Thermoelectric Properties of GeSbTe Based Layered Compounds

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Selenium implantation in GaAs

Effects of Si-ion implantation on crystallization behavior of Ge 2 Sb 2 Te 5 film

Electrical Properties of Conductive Ge Nanocrystal Thin Films Fabricated by Low Temperature In-situ Growth

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Off‐Centering of Ge Atoms in GeBi2Te4 and Impact on Thermoelectric Performance

Influence of phase transformation on structure–property relationship in quaternary In10Sb10Ag10Se70 chalcogenide films

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Electrical properties of silicon-implanted β-Ga2O3:Fe crystals

Doping properties of the Ion-Beam-Sputtered SiGe Film

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Analysis of Implantation-Induced Damage and Amorphization of Gasb