n-Type Chalcogenides by Ion Implantation

Mark A. Hughes,Yanina Fedorenko,Behrad Gholipour,Jin Yao,Tae-Hoon Lee,Russell M. Gwilliam,Kevin P. Homewood,Steven Hinder,Daniel W. Hewak,Stephen R. Elliott,Richard J. Curry
DOI: https://doi.org/10.1038/ncomms6346
2014-11-20
Abstract:Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb doping concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
Materials Science
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