Abstract:Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting the chemical potential into the bandgap, turning the transport of the surface states to be more pronounced than the bulk counterpart. In this work, $Bi_2Se_3$ was grown by molecular beam epitaxy and doped with 0.8, 2, 7, and 14 at. % of Ga, with the aim of shifting the chemical potential into the bandgap. The structural, morphological, and electronic properties of the Ga doped $Bi_2Se_3$ are studied. Raman and X-ray diffraction measurements confirmed the incorporation of the dopants into the crystal structure. Transport and magnetoresistance measurements in the temperature range of 1.5 to 300 K show that Ga-doped $Bi_2Se_3$ is n-type with a bulk charge carrier concentration of $10^{19} cm^{-3}$. Remarkably, magnetotransport of the weak antilocalization effect (WAL) measurements confirm the existence of surface states up to a doping percentage of 2 at. % of Ga and coherence length values between 50-800 nm, which envisages the possibility of topological superconductivity in this material.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to adjust the chemical potential of the topological insulator Bi₂Se₃ through gallium (Ga) doping, thereby reducing the bulk carrier concentration and making the transport properties of the surface states more prominent. Specifically, Bi₂Se₃ is a typical topological insulator, and its natural n - type doping leads to the dominance of bulk conductivity, which limits its application potential as a topological insulator. By introducing gallium doping, researchers hope to move the chemical potential into the band gap, enhance the conductivity of the surface states, and then explore the potential of this material in low - dissipation transport applications, and may even achieve topological superconductivity. The main objectives of the paper include: 1. **Adjustment of structural and electronic properties**: Prepare Bi₂Se₃ thin films with different gallium doping concentrations (0.8, 2, 7, and 14 at.%) by molecular beam epitaxy (MBE) technology, and study the effects of these dopings on the structure, morphology and electronic properties of the material. 2. **Improvement of transport properties**: Evaluate the transport properties of Bi₂Se₃ at different doping concentrations, especially the transport characteristics of the surface states, through resistivity, Hall effect and magnetoresistance measurements. 3. **Exploration of quantum transport phenomena**: Study the effect of gallium doping on quantum transport through the measurement of the weak anti - localization (WAL) effect, and further verify the existence of the surface states and their coherence length. Through these studies, the authors hope to fill the lack of experimental data on gallium - doped Bi₂Se₃ in the existing literature and provide new insights for future research in the fields of topological insulators and topological superconducting materials.

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