Abstract:Many efforts have been made to seek structures grown on GaAs substrate with long emission wavelength for telecommunication, among which GaAsSb/GaInAs bilayer quantum wells embedded into GaAs layers provide a promising structure for realizing 1 300 nm emission. It has been pointed out that the GaAsSb/GaInAs conduction band alignment is of type-Ⅱ, with electrons confined in GaInAs layer whereas holes confined in GaAsSb layer.The relative strong ground state transition has been observed in photoluminescence (PL) spectra.However, the physical aspects of the bilayer quantum well (QW) structure were still not very well studied. For example, the experimental verification of band alignment between GaInAs and GaAsSb and the overlap integral of type-Ⅱ transitions were not well provided. The behavior of excited states transitions was reported, but had never been investigated by PL spectra, which is studied in this paper. The optical transitions in GaAsSb/GaInAs/GaAs bilayer quantum wells (QWs) are studied by photo-(luminescence) (PL) and photoreflectance (PR) measurements. Two PL peaks with large energy separation (120 meV) are observed at 300 K, while at 10 K only the one at lower energy is observed. Further studies show that the PL peak with higher energy appears only at the temperatures above 150 K. The physical mechanisms of the two PL peaks have been identified to be different. The lower PL peak and the higher one belong to type-Ⅱ and type-Ⅰ-like transition, respectively. An optical transition model is formed and the wave functions overlap integrals of electrons and holes are calculated. The methods to enhance the lowest interband (optical) transitions of the QW are suggested based on the growth conditions of the studied samples.

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