Abstract:Amorphous-Si∶H/SiO2 multilayers with various sub-layer thicknesses were layer-by-layer deposited and in situ plasma oxidized in a plasma-enhanced chemical vapor deposition system. Nano-crystalline Si can be formed in the initial a-Si sub-layers based on the constrained crystallization principal. Raman scattering and TEM measurements were used to characterize the structure of multilayers during the formation of nc-Si/SiO2 multilayers. It was found that the annealing temperature and the a-Si∶H sub-layer thickness influence on the crystallization process obviously. Photoluminescence was observed at room temperature and the PL peak position is about 750 nm. Light-emitting Diode with MOS (Metal-Oxide-Semiconductor) structure was designed and fabricated by evaporating Al electrodes on both the upper and the bottom surface of the sample. Electroluminescence at room temperature was also observed by the naked eye with the turn-on voltage of 6 V. The EL spectra contain two luminescence bands located at 520 nm and 650 nm, respectively. The influence of nc-Si and interface of nc-Si and SiO2 on the luminescent character of the device was briefly discussed.

Light Emission Properties of Crystalline SiO2 Coated with LiNbO3/LiTaO3 Multilayers

Ultraviolet and Blue Emission from Crystalline SiO2 Coated with LiNbO3 and LiTaO3

Photoluminescence from Optical Waveguiding Linbo3 Film Formed on Crystalline Sio2 Substrate by Pulsed Laser Deposition

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Optical emission from LiNbO3(:Fe)/porous Si structures

Luminescence from Si/SiO 2 with Si Implantation

Light Emission from Si Nanoclusters Formed at Low Temperatures

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Strong Ultraviolet Emission from Sio2/Linbo3-(: Fe)/Sio2 Structures

Novel Optical Characteristics of Eu2+doped and Eu2+, Ce3+co-doped LiSi2N3phosphors by Gas-Pressed Sintering

The Evolution Investigation Of Photoluminescence From A-Si : H/Sio2 To Nc-Si/Sio2 Multilayers

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Theory for Photoluminescence from Sio2 Films Containing Si Nanocrystals and Er Ions

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Light Emissions from Linbo3/Sio2/Si Structures

Interface State-Related Linear and Nonlinear Optical Properties of Nanocrystalline Si/SiO2 Multilayers

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer