Abstract:The intense visible photoluminescence (PL) of porous Si has attracted much interest as it opens up the possibility of fabricating light-emitting devices based on silicon technology. The effect was attributed to a quantum confinement of carriers in structures only a few nm in size, resulting in an effective increase of the apparent band-gap with respect to bulk Si. Recent years, it had been widely reported about Si and Ge nano particles embedded in SiO_2 and Si_3N_4 films, some interesting phenomenon were also reported. Since the successful synthesis of amorphous semiconductor multiple films used plasma enhanced chemical vapour deposition (PECVD) by Exxon Corporation, the technology which need little complex epitaxy has attracted much attention, as we all known, the multiple films has a strong quantum effect, and also some interface effect would be magnified compared to the single layer films, it brings some novel phenomenon. The low temperature or room temperature photoluminescence had been widely reported, and they mostly concerned about the quantum effect and interface structure, but the photoluminescence dynamics of the multiple semiconductor films had not been reported. In this paper, we have performed multiple a-SiC_x∶H/a-Si∶H films successfully by PECVD. Microstructure and time-resolved PL spectra of the samples were studied. The results showed that a significant photoluminescence peak at about 650 nm was observed, and the peak position varies with annealing temperature. A maximum intensity of PL peak and a minimum decay time (t_1) were obtained for the sample annealed at 900 ℃. The origin of luminescence was suggested and discussed.

The Evolution Investigation Of Photoluminescence From A-Si : H/Sio2 To Nc-Si/Sio2 Multilayers

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers

Origin and Evolution of Photoluminescence from Si Nanocrystals Embedded in Asio2matrix

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Visible Photoluminescence Originated from Various Mechanisms During Step by Step Annealing

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Light Emission from Si Nanoclusters Formed at Low Temperatures

Time Resolution Photoluminescence of A-Sicx:H/nc-si:h Multi-layers at Room Temperature

Preparation and photoluminescence of SiC/Si/SiO2 multi-layer structure

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

The origin of blue photoluminescence from nc-Si/SiO 2 multilayers

Luminescence from Si/SiO 2 with Si implantation

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix