Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Damage analysis of 25KeV As+ implantation into silicon with large tilt angles

Transmission Electron Microscopy and Spectroscopic Ellipsometry Studies of Damage Layer Induced by Large Tilt Angle Ion Implantation

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Analysis of Implantation-Induced Damage and Amorphization of Gasb

Evolution of secondary defects in arsenic implanted Si

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Study of damage generation induced by focused helium ion beam in silicon

Insights into High-Dose Helium Implantation of Silicon

Modeling of ion beam induced damage in Si during channeling Rutherford backscattering spectrometry analysis

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Mechanical Properties and Structure Evolution of Single-Crystalline Silicon Irradiated by 1 MeV Au+ and Cu+ Ions

Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

Characterization of Radiation Damage Induced by B and B4 Ion Implantation into Silicon

Molecular dynamics analysis of the influence of ion implantation parameters on ultra-precision machining of silicon carbide

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Non-linear characteristics of irradiation damages in silicon by MeV Si clusters