Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination

Study of Radiation Damage in Mg+-implanted GaN

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Structural Properties of Ne Implanted GaN

Damage Produced on GaN Surface by Highly Charged Krq+ Irradiation

Effect of Ion-Induced Damage on Ganas/Gaas Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

Implantation-Induced Electrical Isolation of Gaasn Epilayers Grown by Metalorganic Chemical Vapor Deposition

The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Physical Mechanism of Field Modulation Effects in Ion Implanted Edge Termination of Vertical GaN Schottky Barrier Diodes

Au ion irradiation induces ultralow thermal conductivity in GaN

Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation

Damage Evolution in Gan under Mev Heavy Ion Implantation

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Effects of 532 nm laser-assisted annealing on metal contact to p-GaN

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Electrical isolation of p-type GaAsN epitaxial layers by ion irradiation

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Wet etching of GaN damaged by heavy ion irradiation