Abstract:GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

Growth of Single-Crystalline GeSn Films with High-Sn Content on InP Substrates by Sputtering and Rapid Thermal Annealing

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Enhanced Thermoelectric Properties of SnSe Thin Films Grown by Pulsed Laser Glancing-Angle Deposition

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Growth of single crystalline GeSn alloy epilayer on Gd 2 O 3 /Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates

Epitaxial Growth Of Ge1-Xsnx Films With X Up To 0.14 Grown On Ge (00l) At Low Temperature

UHV-CVD Growth of High Quality GeSn Using SnCl4: from Material Growth Development to Prototype Devices

Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

Highly Strained Ge1-xSnx Alloy Films with High Sn Compositions Grown by MBE

Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Ion Implantation Damage Recovery in GeSn Thin Films

Effects of Annealing on the Behavior of Sn in GeSn Alloy and GeSn-Based Photodetectors

Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable Ge$_{0.89}$Sn0$_{.11}$

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1???xSn x /Ge semiconductor probed by x-ray absorption and diffraction methods

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing