Abstract:Synthesis of device-quality GeSn materials with higher Sn compositions is hindered by various factors, such as Sn segregation, clustering, and short-range ordering effects. In the present work, the impact of the clustering of Sn atoms in a GeSn semiconductor alloy was studied by density functional theory using SG15 pseudopotentials in a Synopsys QuantumATK tool, where the thermodynamic stability, effective band structure, indirect and direct bandgaps, and density of states (DOS) were computed to highlight the difference between a cluster-free random GeSn alloy and a GeSn alloy with Sn–Sn clusters. A 54-atom bulk Ge1–xSnx (x = 3.71%–27.77%) supercell was constructed with cluster-free and a first nearest neighbor Sn–Sn clustered GeSn alloy at each composition for this work. Computation using the generalized gradient approximation exchange-correlation functional showed that the thermodynamic stability of GeSn was reduced due to the clustering of Sn, which increased the formation energy of the GeSn alloys by increasing the Hartree potential energy and exchange-correlation energy. Moreover, with the effective band structure of the GeSn material at a Sn composition of ∼22%, both direct (Eg,Γ) and indirect (Eg,L) bandgaps decreased by a large margin of 40.76 and 120.17 meV, respectively, due to Sn–Sn clustering. On the other hand, Eg,Γ and Eg,L decrease is limited to 0.5 and 12.8 meV, respectively, for Sn composition of ∼5.6%. Similar impacts were observed on DOS, in an independent computation without deducing from the electronic band structure, where the width of the forbidden band reduces due to the clustering of Sn atoms in GeSn. Moreover, using the energy bandgaps of GeSn computed with the assumption of it being a random alloy having well-dispersed Sn atoms needs revision by incorporating clustering to align with the experimentally determined bandgap. This necessitates incorporating the effect of Sn atoms clustered together at varying distributions based on experimental characterization techniques such as atom probe tomography or extended x-ray absorption fine structure to substantiate the energy bandgap of the GeSn alloy at a particular composition with precision. Hence, considering the effect of Sn clusters during material characterization, beginning with the accurate energy bandgap characterization of GeSn would help in mitigating the effect of process variations on the performance characteristics of GeSn-based group IV electronic and photonic devices such as varying leakage currents in transistors and photodiodes as well as the deviation from the targeted wavelength of operation in lasers and photodetectors.

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Growth of Single-Crystalline GeSn Films with High-Sn Content on InP Substrates by Sputtering and Rapid Thermal Annealing

Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Highly Strained Ge1-xSnx Alloy Films with High Sn Compositions Grown by MBE

Epitaxial Growth Of Ge1-Xsnx Films With X Up To 0.14 Grown On Ge (00l) At Low Temperature

Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1???xSn x /Ge semiconductor probed by x-ray absorption and diffraction methods

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Impact of stoichiometry and strain on Ge$_{1-x}$Sn$_{x}$ alloys from first principles calculations

Epitaxial Stabilisation of ${\bf \mathrm{Ge_{1-x}Sn_x}}$ Alloys

Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable Ge$_{0.89}$Sn0$_{.11}$

Optoelectronic Properties for the Compressively Strained Ge1−xSnx Films Grown on Ge(004)

UHV-CVD Growth of High Quality GeSn Using SnCl4: from Material Growth Development to Prototype Devices

Strain engineering in Ge/GeSn core/shell nanowires