Abstract:$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial development of group IV semiconductors under low thermal budgets and CMOS compatible conditions. The $\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ films were produced between 160-200oC with 3-5% Si and ~ 5-11 % Sn, which traverses the indirect to direct gap transition in Ge-Sn materials. The films were fully strained to Ge and exhibited defect-free microstructures, flat surfaces, homogeneous compositions, uniform thicknesses and sharp interfaces as required for device manufacturing. A comparative study was then conducted to investigate the applicability of $\rm GeH_{3}Cl$ for the synthesis of $\rm Ge_{1-y}Sn_{y}$ binaries under similar experimental conditions. The$\rm Ge_{1-y}Sn_{y}$ films were grown fully strained to Ge, but with reduced Sn compositions ranging from ~ 2 - 7 % and lower thicknesses relative to $\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$. This prompted efforts to further investigate the growth behavior of $\rm Ge_{1-y}Sn_{y}$ using the $\rm GeH_{3}Cl$ method, bypassing the Ge buffer to produce samples directly on Si, with the aim of exploring how to manage interface strain. In this case the $\rm Ge_{1-y}Sn_{y}$ on Si films exhibited compositions and thicknesses comparable to $\rm Ge_{1-y}Sn_{y}$-on-Ge films; however, their strain states were mostly relaxed, presumably due to the large misfit between $\rm Ge_{1-y}Sn_{y}$ and Si. Efforts to increase the concentration and thickness of these samples resulted in non-homogeneous multi-phase materials containing large amounts of interstitial Sn impurities.

Highly Strained Ge1-xSnx Alloy Films with High Sn Compositions Grown by MBE

Epitaxial Growth Of Ge1-Xsnx Films With X Up To 0.14 Grown On Ge (00l) At Low Temperature

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1???xSn x /Ge semiconductor probed by x-ray absorption and diffraction methods

Optoelectronic Properties for the Compressively Strained Ge1−xSnx Films Grown on Ge(004)

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Epitaxial Stabilisation of ${\bf \mathrm{Ge_{1-x}Sn_x}}$ Alloys

Enhanced Carrier Mobility And Direct Tunneling Probability Of Biaxially Strained Ge1-Xsnx Alloys For Field-Effect Transistors Applications

Impact of stoichiometry and strain on Ge$_{1-x}$Sn$_{x}$ alloys from first principles calculations

Growth of Single-Crystalline GeSn Films with High-Sn Content on InP Substrates by Sputtering and Rapid Thermal Annealing

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Strain engineering in Ge/GeSn core/shell nanowires

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

Synthesis of Group-IV ternary and binary semiconductors using epitaxy of $\rm GeH_3Cl$ and $\rm SnH_4$

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Temperature Dependence of Raman Scattering in GeSn Films

Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing