Formation of Direct Energy Gap Group IV Semiconductor Alloys and Quantum Dot Arrays in Sn x Si 1−x /Si and Sn x Ge 1−x /Ge Alloy Systems

R. Ragan,K. S. Min,H. Atwater
DOI: https://doi.org/10.1557/PROC-583-349
Abstract:The narrow gap semiconductor alloys Sn x Ge 1−x , and Sn x Si 1−x offer the possibility for engineering tunable direct energy gap Group IV semiconductor materials. For pseudomorphic Sn x Ge 1−x , alloys grown on Ge (001) by molecular beam epitaxy, an indirect-to-direct bandgap transition with increasing Sn composition is observed, and the effects of misfit on the bandgap analyzed in terms of a deformation potential model. Key results are that pseudomorphic strain has only a very slight effect on the energy gap of Sn x Ge 1−x , alloys grown on Ge (001) but for Sn x Ge 1−x alloys grown on Ge (111) no indirect-to-direct gap transition is expected. In the Sn x Si 1−x system, ultrathin pseudomorphic epitaxially-stabilized α-Sn x Si 1−x alloys are grown on Si (001) substrates by conventional molecular beam epitaxy. Coherently strained oa-Sn quantum dots are formed within a defect-free Si (001) crystal by phase separation of the thin Sn x Si 1−x layers embedded in Si (001). Phase separation of the thin alloy film, and subsequent evolution occurs via growth and coarsening of regularly-shaped α-Sn quantum dots that appear as 4–6 nm diameter tetrakaidecahedra with facets oriented along elastically soft [100] directions. Attenuated total reflectance infrared absorption measurements indicate an absorption feature due to the α-Sn quantum dot array with onset at ˜0.3 eV and absorption strength of 8 × 10 3 cm −1 , which are consistent with direct interband transitions.
Engineering,Materials Science,Physics
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