Abstract:The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this alloy, thereby making it suitable for light emitters. Other group IV alloys may also potentially exhibit material properties useful for device applications, expanding the space for band gap engineering in group IV. In this work the electronic band structure of all group IV semiconductor alloys is investigated. Twelve possible A:B alloys, where A is a semiconducting host (A = C, Si, and Ge) and B is an isovalent dopant (B = C, Si, Ge, Sn, and Pb), were studied in the dilute regime (0.8%) of the isovalent dopant in the entire Brillouin zone (BZ), and the chemical trends in the evolution of their electronic band structure were carefully analyzed. Density functional theory with state-of-the-art methods such as meta-GGA functionals and a spectral weight approach to band unfolding from large supercells was used to obtain dopant-related changes in the band structure, in particular the direct band gap at the {\Gamma} point and indirect band gaps at the L(X) points of the BZ. Analysis of contributions from geometry distortion and electronic interaction was also performed. Moreover, the obtained results are discussed in the context of obtaining a direct fundamental gap in Ge:B (B = C, Sn, and Pb) alloys, and intermediate band formation in C:B (B = Sn and Pb) and Ge:C. An increase in localization effects is also observed: a strong hole localization for alloys diluted with a dopant of a larger covalent radius and a strong electron localization for alloys with a dopant of smaller radius. Finally, it is shown that alloying Si and Ge with other elements from group IV is a promising way to enhance the functionality of group IV semiconductors.

Composition-dependent band gaps and indirect-direct band gap transitions of group-IV semiconductor alloys.

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces

From pseudo-direct hexagonal germanium to direct silicon-germanium alloys

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Formation of Direct Energy Gap Group IV Semiconductor Alloys and Quantum Dot Arrays in Sn x Si 1−x /Si and Sn x Ge 1−x /Ge Alloy Systems

A first-principle study on the band structure of GePb alloys

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Studies Of The Electronic And The Optical Properties Of The Ordered Ternary Alloys X0.5y0.5o2(X, Y = Si, Ge, Sn) By Using First-Principles Calculations

First-Principles Study On The Electronic And Optical Properties Of Sn(X)Gei(1) - (X)

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

The effect of isovalent doping on the electronic band structure of group IV semiconductors

Unfolding Band and Absorption Energy Shift of \(\text{Si-Ge}\) Nano Crystals from First-principles Calculations

Metastable order-disorder phase transition of the alloys (GaSb)1-XGe2x, (InP)1-xGe2x and effects on energy gaps

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si$_x$Ge$_{1-x}$ alloys

Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy

Transition between direct gap and indirect gap in two dimensional hydrogenated honeycomb Si x Ge 1− x alloys

Structural, Electronic and Optical Properties of Bandgap-Tunable Cu2ZnSixSn1−xSe4 Alloys

Electronic structure and optical properties of Ge96−Sn (0≤x≤50): A first-principles study

Group 14 semiconductor alloys in the P41212 phase: A comprehensive study