Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

Transition between direct gap and indirect gap in two dimensional hydrogenated honeycomb Si x Ge 1− x alloys

First principles molecular dynamics study of amorphous Si\sub{1-x}Ge\sub{x}:H alloys

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Unfolding Band and Absorption Energy Shift of \(\text{Si-Ge}\) Nano Crystals from First-principles Calculations

Composition-dependent band gaps and indirect-direct band gap transitions of group-IV semiconductor alloys.

Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Structural, electronic and optical properties of tetrahedral $Si_xGe_{47-x}:H_{60}$ nanocrystals: A Density Functional study

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Direct Observation of Compositionally Homogeneousa-C: H Band-Gap-Modulated Superlattices

Unified theory of the direct or indirect bandgap nature of conventional semiconductors

Helium Incorporation Stabilized Direct-gap Silicides

Band Gap Characters and Ferromagnetic/Antiferromagnetic Coupling in Group-IV Monolayers Tuned by Chemical Species and Hydrogen Adsorption Configurations

Band structure of hydrogenated Si nanosheets and nanotubes

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si$_x$Ge$_{1-x}$ alloys

A first-principle study on the band structure of GePb alloys

Alloy engineered germanium monochalcogenide with tunable bandgap for broadband optoelectrical applications

Unexpected Band Gap Evolution and High Carrier Mobility Sparked by the Orbital Variation in Two-Dimensional GaGeX (X = S, Se, Te)

Band Offset of Gaas/Alxga1-Xas Heterojunctions from Atomistic First Principles

Low-energy Effective Hamiltonian for Giant-Gap Quantum Spin Hall Insulators in Honeycomb X -Hydride/halide ( X = N-Bi ) Monolayers