Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys

Michihiro Yamada,Shota Suzuki,Ai I. Osaka,Kazuaki Sumi,Takahiro Inoue,Azusa N. Hattori,Shinya Yamada,Kentarou Sawano,Marwan Dhamrin,Kohei Hamaya

DOI: https://doi.org/10.1016/j.mssp.2024.108232

IF: 4.1

2024-02-22

Materials Science in Semiconductor Processing

Abstract:For high-performance spintronic applications with Co-based Heusler alloys, we explore Si 1−x Ge x (111) grown by liquid phase epitaxy (LPE) with Al–Ge mixed paste, where x is the Ge content. By annealing the screen printed Al–Ge paste on a Si(111) substrate, a continuous Si 1−x Ge x (111) layer with a smooth interface between the Si 1−x Ge x layer and Si substrate is epitaxially grown. The surface with residual paste is polished and treated by chemical mechanical polishing and a catalyst referred etching (CARE) process, resulting in a reduction of the root-mean-square roughness to 0.52 nm over a large-scale area. After the surface treatments of the LPE-Si 1−x Ge x , we can obtain Si 0.93 Ge 0.07 (111) to epitaxially grow one of the Co-based Heusler alloys, Co 2 FeSi. The magnetic properties and intermixing at the Co 2 FeSi/LPE-Si 0.93 Ge 0.07 (111) interface are consistent with those at the Co 2 FeAl 0.5 Si 0.5 /Si(111) and the Co 2 FeAl 0.5 Si 0.5 /Ge(111) interfaces. The Al–Ge-paste-induced LPE-Si 1−x Ge x (111) and the CARE process for the surface are quite effective for the growth of Co-based Heusler alloys in future SiGe-based spintronic devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied