Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

(Invited) Growth of MnGe Nanostructures for Spintronics Applications

Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Epitaxy of half-metallic Heusler alloy Co 2 MnSi on Ge(111) substrate via a graphene interlayer with L 2 1 -ordered Co 2 MnSi

Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 Van Der Waals Heterostructures.

Epitaxial all-bcc-Co50Fe50/Cu/Co50Fe50 current-in-plane giant magnetoresistive spin-valves on Si(0 0 1) substrate

From Two- to Multi-State Vertical Spin Valves Without Spacer Layer Based on Fe3GeTe2 Van Der Waals Homo-Junctions.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure

Interplay of growth mode and thermally induced spin accumulation in epitaxial Al/Co$_2$TiSi/Al and Al/Co$_2$TiGe/Al contacts

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

First-principles study of spin-transfer torque in Co2MnSi/Al/Co2MnSi spin-valve

Epitaxial Growth of Two-Dimensional Magnetic Lateral and Vertical Heterostructures

Growth-Controlled Engineering of Magnetic Exchange Interactions in Single Crystalline GaCoZnO1-v Epitaxial Films with High Co Concentration

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures