Solid phase reaction between crystalline, (002) oriented Co film and Si(111) substrate: Preferential orientations of silicides
Jifeng Liu,Jiayou Feng,Bin Li,Jing Zhu
DOI: https://doi.org/10.1023/A:1010942125261
2001-01-01
Journal of Materials Science Letters
Abstract:With the development of the ultra-large scale integrated circuit (ULSI) technology, CoSi2 has become a leading candidate for contact materials in electronic devices due to its linewidth-independent low resistivity and small lattice mismatch with Si substrate [1]. Among many methods to fabricate epitaxial CoSi2 films, solid phase epitaxy (SPE) is a very important one [2]. Ti-interlayer mediated epitaxy (TIME) [3] and oxide mediated epitaxy (OME) [4] can be regarded as improvements of SPE. In SPE, the Co film is usually deposited at room temperature and the as-deposited Co films are usually amorphous [2, 5]. During low temperature annealing, the crystallization of Co film can be observed; yet during high temperature annealing, especially rapid thermal annealing (RTA), this process cannot be observed [5]. So in high temperature RTA, we cannot tell whether the Co film has undergone crystallization before the formation of silicides. This fact suggests that the formation of silicides during high temperature RTA may be the result of the reaction between amorphous Co film and Si substrate, not the reaction between crystalline Co film and Si substrate. Based on this consideration, we expect the reaction between real crystalline Co film and Si substrate to produce some results different from previous reports. Si(111) substrate was chosen because the epitaxial growth of CoSi2 film on Si(111) is not so complicated as that on Si(100). The purpose of this letter is to study the reaction between crystalline Co film and Si(111) substrate. n-Typed Si(111) with a resistivity of 4‐4.8� · cm were ultrasonically cleaned in acetone, rinsed in deionized water, etched in HF : H2O2(1 : 1), rinsed in deionized water again, and then loaded into the e-gun evaporation system. The base pressure of the system was 1.2 × 10 −8 Torr. During the deposition process, the vacuum level was 2.3 × 10 −7 Torr. Crystalline Co films of 150 nm thickness were obtained by heating the substrate to 150 ◦ C during the e-gun evaporation. Subsequent ex situ RTA was carried out in a high vacuum of 3.0 × 10 −6 Torr at temperatures between 470 and 850 ◦ C for 3 min. X-ray diffraction (XRD) was used to investigate the phases and their preferential orientations formed during the Co-Si reaction. The composition of the film was analyzed by auger electron spectroscopy(AES) and the crystalline properties of CoSi2 films were evaluated by reflection high-energy electron diffraction (RHEED).