Abstract:This talk will focus on recent advancements in the formation of ultrathin Ni1-xPtx silicide films targeting CMOS technology nodes beyond 22 nm where silicide films much thinner than 10 nm are required according to the technology roadmap. The past experience in using metal silicides for various generations of CMOS technology indicates that control of the silicide formation in the sub-10 nm regime is a foremost urgent issue especially for devices fabricated on UTB/ETB-SOI (ultrathin-body/extremely-thin-body silicon-on-insulator) substrates or with nanowire-like Fins. Our recent results show that both initial metal thickness and Pt fraction in the as-deposited Ni1-xPtx films are critical parameters determining the resultant silicide films in terms of phase formation, film thickness, specific resistivity, interfacial morphology and morphological stability at elevated temperatures. The phenomenon is discussed with a particular mention of thermodynamic effects. Surface energy plays an increasingly important role for thinner films with an increasing surface to volume ratio. To illustrate the critical importance of the entropy of mixing in the formation of ternary Ni-Pt-Si silicide alloy films, our recent results on silicide formation and subsequent morphological stability starting with ultrathin Co1-xNix films are presented and discussed as well. The talk will end with the presentation of a novel and economical process for a controllable formation of Ni1-xPtx silicide films below 8 nm in thickness, as well as its implications in advanced CMOS technology.

Fabrication and properties of ternary silicide (CoxNi1-x) Si2 thin films

Formation and properties of ternary silicide (CoxNi1-x)Si2 thin films

Formation and properties of ternary silicide (Co/sub x/Ni/sub 1-x/)Si/sub 2/ thin films

SiO x mediated epitaxial ternary silicide (Co 1-xNi x) Si 2

SiO_x Mediated Epitaxial Ternary Silicide (Co_(1-X)ni_x)si_2

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Growth of Oxide-Mediated Ternary Silicide Controlled by A Si Cap Layer by Rapid Thermal Annealing

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

Formations and Morphological Stabilities of Ultrathin Cosi2 Films

Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Multilayer solid phase reaction and epitaxial growth of metal silicide on Si

I-V-T studies on ternary silicide Co1-xNixSi2/n-Si Schottky contacts

Extensive Raman spectroscopic investigation of ultrathin Co 1-xNi xSi 2 films grown on Si(100)

Schottky Barrier Characteristics of Ternary Silicide Co1−xNixSi2 on N-Si(1 0 0) Contacts Formed by Solid Phase Reaction of Multilayer

Epitaxial growth of CoSi2 films by solid state reaction of Co/Ti/Si

Understanding Solid-State Interactions: Ultrathin Ni1-xPtx Silicide Films Formed on Si(100)

The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Phase formation and morphological stability of ultrathin Ni-Co-Pt silicide films formed on Si(100)

Thermal stability improvement of ultrathin CoSi2 film formed by TiN capping layer and Co/Ti/Si ternary solid phase reaction