Experimental Study of Optical Properties O F Fe(1-x)CoxSi2 Thin Films

张荣君,周鹏,张颖君,郑玉祥,陈良尧
DOI: https://doi.org/10.3321/j.issn:1005-0086.2001.08.004
2001-01-01
Abstract:A series of Fe (1-x) Co xSi 2 thin films with variation of x was prepared by reactive deposition epitaxy (RDE) method.The optical properties of the samples are reported in this paper.The dielectric function of the samples was measured by spectroscopic ellipsometer in the photon energy range of 0.26~4.80 eV at room temperature.It's interesting to find that the dielectric function of Fe (1-x) Co xSi 2 films is strongly dependent on the phase of the films:a) The dielectric function spectra show interference peaks in the low photon energy range for the β phase Fe (1-x) Co xSi 2 samples;b) The dielectric function spectra show a feature between the semiconductor and metal feature for the samples containing both β and Σ phase Fe (1-x) Co xSi 2;c) The dielectric function spectra show metal feature for the Σ phase Fe (1-x) Co xSi 2 samples.According to the x ray diffraction(XRD) results,the variation of the dielectric spectra is arisen from the change of the Fe Si phase in the samples,rather than that from the variation of x.
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