Revealing the Electronic Structure and Optical Properties of CuFeO 2 as a p-Type Oxide Semiconductor
Haiwan Xu,Rui Wu,Jia-Ye Zhang,Wenqiao Han,Lang Chen,Xuan Liang,Choon Y. Haw,Piero Mazzolini,Oliver Bierwagen,Dong-Chen Qi,Kelvin H. L. Zhang
DOI: https://doi.org/10.1021/acsaelm.1c00090
IF: 4.494
2021-03-29
ACS Applied Electronic Materials
Abstract:Delafossite CuFeO<sub>2</sub> is a p-type oxide semiconductor with a band gap of ∼1.5 eV, which has attracted great interests for applications in solar energy harvesting and oxide electronics. However, there are still some discrepancies in the literature regarding its fundamental electronic structure and transport properties. In this paper, we use a synergistic combination of resonant photoemission spectroscopy and X-ray absorption spectroscopy to directly study the electronic structure of well-defined CuFeO<sub>2</sub> epitaxial thin films. Our detailed study reveals that CuFeO<sub>2</sub> has an indirect and d–d forbidden band gap of 1.5 eV. The top of the valence band (VB) of CuFeO<sub>2</sub> mainly consists of occupied Fe 3d states hybridized with Cu 3d and O 2p, and the bottom of the conduction band (CB) is primarily made up of unoccupied Fe 3d states. The localized nature of the Fe 3d states at both CB and VB edges would limit the carrier mobility and the dynamics of photoexcited carriers. In addition, Mg doping at Fe sites in CuFeO<sub>2</sub> increases the hole carrier concentration and leads to a gradual shift of the Fermi level toward the VB. These insights into its electronic structure are of fundamental importance for rational designing and improving the performance of CuFeO<sub>2</sub> as photocatalysts.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00090?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00090</a>.Film morphology and thickness of CuFeO<sub>2</sub> were examined by tapping-mode AFM and SEM; Cu LMM spectra of CuFeO<sub>2</sub> and standard samples of Cu<sub>2</sub>O (green), CuO (black), and Cu (gray) from reference; VB spectra excited with photon energies of 705 eV, 709 eV, and 710.5 eV; XRD pattern of CuFeO<sub>2</sub>, 0.2%, 1%, 3%, and 5% Mg-doped CuFeO<sub>2</sub> epitaxial thin films; AFM images of 0.2% Mg-CuFeO<sub>2</sub> film (RSM = 7.97 nm), 1% Mg-CuFeO<sub>2</sub> film (RSM = 9.52 nm), 3% Mg-CuFeO<sub>2</sub> film (RSM = 10.10 nm), and 5% Mg-CuFeO<sub>2</sub> film (RSM = 12.58 nm); absorption coefficient of Mg-doped CuFeO<sub>2</sub> thin films as a function of photon energy; and Cu 2p<sub>3/2</sub> and O 1s spectra of CuFeO<sub>2</sub> films with various Mg contents (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00090/suppl_file/el1c00090_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic