Abstract:A series of Fe(1-x)CoxSi2 thin films with variation of x was prepared by reactive deposition epitaxy (RDE) method. The optical properties of the samples are reported in this paper. The dielectric function of the samples was measured by spectroscopic ellipsometer in the photon energy range of 0.26-4.8 eV at room temperature. It's interesting to find that the dielectric function of Fe(1-x)CoxSi2 films is strongly dependent on the phase of the films: (a) The dielectric function spectra show interference peaks in the low photon energy range for the beta phase Fe(1-x)CoxSi2 samples. (b) The dielectric function spectra show a feature between the semiconductor and metal feature for the samples containing both beta and sigma phase Fe(1-x)CoxSi2. (c) The dielectric function spectra show metal feature for the sigma phase Fe(1-x)CoxSi2 samples. According to the x-ray diffraction results, the variation of the dielectric spectra is arisen from the change of the Fe-Si phase in the samples, rather than that from the variation of x.

Study of optical properties of Fe(1-x)CoxSi2 thin films