Synthesis and Optical Properties of Semiconducting Beta-Fesi2 Nanocrystals

Q Wan,TH Wang,CL Lin
DOI: https://doi.org/10.1063/1.1574845
IF: 4
2003-01-01
Applied Physics Letters
Abstract:Vacuum electron-beam coevaporation of Fe and Si followed by annealing in N2 ambient is used to synthesize beta iron disilicide (β-FeSi2) nanocrystals. The reason for β-FeSi2 nanocrystal formation is discussed based on the principle of minimization of the interface energy. X-ray diffraction studies suggest that β-phase FeSi2 nanostructures turn into the α phase when the annealing temperature is 1000 °C. The optical transmission measurements indicate that the β-FeSi2 nanocrystals have a direct-band structure with the energy gap in the range of 0.84–0.88 eV. A sharp photoluminescence peak of the β-FeSi2 nanocrystals located at 1.5 μm is measured at 77 K.
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