Abstract:High-current Fe ion implantation technique was employed to synthesize Fe-silicide layers on Si wafers, using a newly constructed metal vapor vacuum arc ion source. The Fe ions were extracted at a voltage of 40 kV with a varying ion current density from 65 to 152 muA/cm2 and a nominal ion dose varied from 3 X 10(17) to 3 X 10(18) Fe/cm2. At a fixed nominal dose of 4 X 10(17) Pe/cm2, a semiconducting beta-FeSi2 layer gradually grew on Si with increasing ion current density and a qualified beta-FeSi2 layer with a relative sharp interface was obtained, when the ion current densities exceeded 115 muA/cm2. While implanting at a fixed ion current density of 152 muA/cm2 with varying ion dose, the beta-FeSi2 phase began to form first at a nominal dose of 3 X 10(17) Fe/cm2, and eventually transformed into a metallic alpha-FeSi2 phase when the nominal dose reached 3 X 10(18) Fe/cm2. Further information of the formation of Fe disilicides was obtained by comparing the postannealing results of some of the implanted wafers with those observed immediately after implantation. Tle formation mechanism of the Fe disilicides is discussed in terms of the beam heating effect, which in turn resulted in a simultaneous thermal annealing during Fe ion implantation.

Synthesis Of Beta-Fesi2 And Alpha-Fesi2 Phases By Fe Ion-Implantation Into Si Using Metal Vapor Vacuum-Arc Ion-Source

Synthesis of Β- and Α-Fesi2 Phases by Fe Ion Implantation into Si Using Metal Vapor Vacuum Arc Ion Source

Study about Iron Disilicide Formation by High Current Ion Implantation

Ion Beam Syntheses and Microstructure Studies of A New Fesi2 Phase

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

Si:Fe Solid Solution Heavily Doped with Fe Prepared by Technique of Low Energy Ion Beam

Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

Effects of a Ti Interlayer on Formation of Β-Fesi2 on Si(001) Substrates

Atomic Diffusion in the Interface of Fe/Si Prepared by Magnetron Sputtering

Synthesis and Optical Properties of Semiconducting Beta-Fesi2 Nanocrystals

Ti–Si Compounds Formation by High-Current Ion Implantation

FexSi grown with mass-analyzed low-energy dual ion beam deposition

High Quality Β-Fesi2 Thin Films Prepared on Silicon (100) by Using Pulsed Laser Ablation of Fe Target

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation