Abstract:High-current Fe ion implantation technique was employed to synthesize Fe-silicide layers on Si wafers, using a newly constructed metal vapor vacuum arc ion source. The Fe ions were extracted at a voltage of 40 kV with a varying ion current density from 65 to 152 muA/cm2 and a nominal ion dose varied from 3 X 10(17) to 3 X 10(18) Fe/cm2. At a fixed nominal dose of 4 X 10(17) Pe/cm2, a semiconducting beta-FeSi2 layer gradually grew on Si with increasing ion current density and a qualified beta-FeSi2 layer with a relative sharp interface was obtained, when the ion current densities exceeded 115 muA/cm2. While implanting at a fixed ion current density of 152 muA/cm2 with varying ion dose, the beta-FeSi2 phase began to form first at a nominal dose of 3 X 10(17) Fe/cm2, and eventually transformed into a metallic alpha-FeSi2 phase when the nominal dose reached 3 X 10(18) Fe/cm2. Further information of the formation of Fe disilicides was obtained by comparing the postannealing results of some of the implanted wafers with those observed immediately after implantation. Tle formation mechanism of the Fe disilicides is discussed in terms of the beam heating effect, which in turn resulted in a simultaneous thermal annealing during Fe ion implantation.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Si:Fe Solid Solution Heavily Doped with Fe Prepared by Technique of Low Energy Ion Beam

Group-IV-diluted magnetic semiconductor FexSi1-x thin films grown by molecular beam epitaxy

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides

Synthesis Of Beta-Fesi2 And Alpha-Fesi2 Phases By Fe Ion-Implantation Into Si Using Metal Vapor Vacuum-Arc Ion-Source

Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

Synthesis of Β- and Α-Fesi2 Phases by Fe Ion Implantation into Si Using Metal Vapor Vacuum Arc Ion Source

Annealing Effects and Infrared Photoelectric Response of Β-Fesi2 on Si (100) Substrate Prepared by Pulsed Laser Deposition

Ion Beam Syntheses and Microstructure Studies of A New Fesi2 Phase

Magnetic Fe-Si Alloy Films Prepared by Low Energy Ion Beam Technique

Investigation of Mn-implanted n-Si by low-energy ion beam deposition

Study about Iron Disilicide Formation by High Current Ion Implantation

Evolution of secondary defects in arsenic implanted Si

Mn-Si Films Fabricated by Low Energy Ion Beam Deposition

High-quality Carbon-Doped Β-Type FeSi2 Films Synthesized by Ion Implantation

The Synthesization of Si Nanocrystals Embedded in HfO2 Matrix by Electron Beam Co-Evaporation Technique

Investigation of structural and electrical properties of silico-ferrite of calcium (SFC) in the Fe2O3–CaO–SiO2 system synthesized by solid-state reaction

Synthesis and characterization of SiCOF/a-C:F double-layer films with low dielectric constant for copper interconnects

Sulfur-Doped Silicon Photodiode by Ion Implantation and Femtosecond Laser Annealing

Epitaxial Growth and Transfer of Single Crystalline Si Thin Films on Double Layered Porous Silicon Substrate