Si:Fe Solid Solution Heavily Doped with Fe Prepared by Technique of Low Energy Ion Beam

刘力锋,陈诺夫,张富强,陈晨龙,李艳丽,杨少延,刘志凯

DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.08.015

2004-01-01

Abstract:Irons are implanted into p-type Si(111) single crystal by low energy ion beam technique at room temperature with energy of l000eV and a dose of 3×1017 cm-2. Subsequent annealing is performed at 400°C under the vacuum condition. Auger electron spectroscopy depth profile of the as-implanted sample indicates that the iron ions are shallowly implanted into the p-type silicon single-crystal substrate and the implantation depth is 42 nm. X-ray diffraction measurement shows that there are no other diffraction peaks besides silicon substrate peak in the annealed sample. X-ray photoelectron spectra show that the iron 2 p peak of binding energy corresponds to pure iron and suggest that no iron silicide is formed in the annealed sample. All of these results indicate that Si:Fe solid solution heavily doped with Fe is prepared. Electrochemical C-V carrier concentration depth profile indicates that silicon conduction type transfers from p type into n type by heavily doping with iron. A p-n junction is formed between Si:Fe solid solution and silicon substrate and shows rectifying behaviour.