Photoconductivity of Iron Doped Amorphous Carbon Films on N-Type Silicon Substrates

Caihua Wan,Xiaozhong Zhang,Xin Zhang,Xili Gao,Xinyu Tan
DOI: https://doi.org/10.1063/1.3177190
IF: 4
2009-01-01
Applied Physics Letters
Abstract:The Fe doped a-C films on n-type silicon substrates were deposited by pulse laser deposition. The Fe doped a-C films are p-type semiconductor and they are rich in sp2 (∼75%). I-V characteristics and photoconductivity of the structures were measured in the current in-plane geometry. The photoconductivity with magnitude of 170∼220 was observed under white light illumination with power of 20 mW/cm2 at room temperature. The photoconductivity is ascribed to the p-n junction formed between the p-type a-C: Fe film and the n-type Si substrate whose reverse-biased saturation current increases intensively under illumination.
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