Abstract:Silicon photoluminescence and lasing have been issues critical to breaking through bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct band gap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the T-T-like transition, contrary to the conclusions from the effective mass approximation, and that T-X mixing leads to a quasidirect band gap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence-a phase transition from weak (or no) luminescent state to strong optical transition, which will aid attempts at realizing high radiative rate NC materials and application-level Si lasers.

Resonant Energy Transfer from Nanocrystal Si to Β-Fesi 2 in Hybrid Si/β-FeSi 2 Film

Optical Emission from C60-coupled Β-Fesi2 Nanocomposites

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

Enhanced Photoluminescence of Silicon Quantum Dots in the Presence of Both Energy Transfer Enhancement and Emission Enhancement Mechanisms Assisted by the Double Plasmon Modes of Gold Nanorods

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

Optical emission from LiNbO3(:Fe)/porous Si structures

Föster Resonance Energy Transfer in Solution-Processed Si-nanoparticle/carbon Nanotube Nanocomposites.

Synthesis and Optical Properties of Semiconducting Beta-Fesi2 Nanocrystals

Theory for Photoluminescence from Sio2 Films Containing Si Nanocrystals and Er Ions

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Photoluminescence From C-60-Coupled Porous Structures Formed On Fe+-Implanted Silicon

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Resonant Electron Transfer and Luminescent Enhancement in a Toluene Suspension of Si Nanocrystals

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Energy Band Mixing in Core-Shell-structured Si∕FeSi2 Nanocomposites

Origin and Evolution of Photoluminescence from Si Nanocrystals Embedded in Asio2matrix

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Photoluminescence and Photoluminescent Excitation of Single Crystalline α-Si3N4 Nanobelts