Abstract: Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct-bandgap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the {\Gamma}-{\Gamma} -like transition, contrary to the conclusions from the effective mass approximation (EMA) and that {\Gamma}-X mixing leads to a quasi-direct bandgap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state-induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement (QC) distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence--a phase transition from weak (or none) luminescent state to strong optical transition, which will aid attempts at realizing high-radiative-rate NCs materials and application-level Si lasers.

Resonant Electron Transfer and Luminescent Enhancement in a Toluene Suspension of Si Nanocrystals

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study

Solvent effect on light-emitting property of Si nanocrystals

Luminescence from Colloidal 3C-Sic Nanocrystals in Different Solvents

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Luminescence Mechanism of Ligand-induced Interface States in Silicon Quantum Dots

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Luminescence of SiNx:Tb3+ Film and Its Coupling with Silver Mediated Surface Plasmon Polaritons

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Excitons in Silicon Nanocrystalites: The Nature of Luminescence

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Silver Nanoshell Plasmonically Controlled Emission of Semiconductor Quantum Dots in the Strong Coupling Regime

Optical Emission from C60-molecule-coupled Si Nanocrystallites

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Room-Temperature Solution Route to Free-Standing Sio2-Capped Si Nanocrystals with Green Luminescence

Electronic States And Luminescence In Higher Fullerene/Porous Si Nanocrystal Composites

Theory on the Quantum Confinement Luminescence Center Model for Nanocrystalline and Porous Si

Luminescence Studies of a Si/SiO2 Superlattice

Resonant Energy Transfer from Nanocrystal Si to Β-Fesi 2 in Hybrid Si/β-FeSi 2 Film