Optical Emission from Annealed Coupled-C-60 Porous Si Systems
Ss Deng,Xl Wu,J Li,C Tan,X Yang,Y Gu,Xm Bao
DOI: https://doi.org/10.1088/0953-8984/14/49/101
2002-01-01
Abstract:C-60 molecules were chemically coupled on porous silicon by means of a kind of silane coupling agent, (CH3O)(3) Si(CH2)(3)NH2. After annealing in N-2 at 900 degreesC, three photoluminescence (PL) peaks were observed, at 384, 440, and 465 nm, under an excitation with the 310 nm line of a Xe lamp. The 440 and 465 nm PL peaks were attributed to optical transitions in hydrogenated amorphous silicon carbide (a-Si1-xCx:H). Upon excitation at 345 nm, three PL peaks appear, at 384, 400, and 480 nm. Spectral analyses suggest that radiative re combination of carriers occurs in the states at the surface of the beta-SiC nanocrystal formed during annealing, whereas their photogeneration takes place in the beta-SiC core. After further annealing at 1100 degreesC, two new PL peaks were observed, at 417 and 436 nm. Spectral examinations reveal that the two blue PL peaks arise from excess Si defect centres at the beta-SiC surface, while the photoexcited carriers still come from the beta-SiC core. Our experiments and results provide a good understanding of light-emitting mechanisms related to SiC materials.