Abstract: Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct-bandgap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the {\Gamma}-{\Gamma} -like transition, contrary to the conclusions from the effective mass approximation (EMA) and that {\Gamma}-X mixing leads to a quasi-direct bandgap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state-induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement (QC) distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence--a phase transition from weak (or none) luminescent state to strong optical transition, which will aid attempts at realizing high-radiative-rate NCs materials and application-level Si lasers.

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Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

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Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Single-atom Infrared Emission in Doped Silicon Nanocrystals.

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Field-effect electroluminescence in silicon nanocrystals

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots

Resonant Electron Transfer and Luminescent Enhancement in a Toluene Suspension of Si Nanocrystals

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Bright Long-Lived Luminescence of Silicon Nanocrystals Sensitized by Two-Photon Absorbing Antenna.