Abstract:In this work, we investigate the silicon nitridation process using a N 2 plasma Glow Discharge Source (GDS) in an ultra-high vacuum chamber. In situ Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS) measurements were performed to determine various chemical environments of the surface species. The main goals of this study are determination of the film chemical composition, to estimate its thickness and identify various phenomena taking place during the nitridation process under different experimental conditions. To achieve these objectives, we developed an ARXPS intensity model for an ultrathin SiN x overlayer. Based on the ARXPS results, which indicate that the silicon nitride film is not homogenous, we adopted a bi-layer model composed of two Si x N y O z layers with varying thickness and chemical composition. The model is built from analysis of photoelectron intensities, considering a comparison between experimental and theoretical data. This bi-layer model revealed that the silicon nitride layer consists of a surface layer composed of approximately equal amounts of silicon and nitrogen (50% each), and an interfacial layer containing varying amounts of oxygen depending on experimental parameters. The presence of oxygen is due to residual air contamination in the vacuum chamber and/or to Si native oxide. The estimated thickness of silicon nitride film is less than 9 nm, depending on the nitridation time and temperature. The model developed in this work enabled us to study the effects of initial surface state (as received or chemically cleaned), Si substrate crystallographic orientation (such as (100) and (111)), and the nitridation temperature (room temperature and 500°C). The diffusing species (N + , N 2 + , O + ), which play a crucial role during nitridation, were found to be influenced by temperature, treatment time, and substrate orientation. The diffusion phenomenon competed with other processes such as NO desorption, leading to a significant impact on formation of the SiN x film. Furthermore, we compared the thickness obtained from the ARXPS model using cross-sectional High-Resolution Transmission Electron Microscopy (HR-TEM) images. Additional Low-Energy Electron Diffraction (LEED) measurements indicated that the SiN x film was amorphous.

Silicon nitride films deposited from SiH2Cl2NH3 by low pressure chemical vapor deposition: kinetics, thermodynamics, composition and structure

Properties of "stoichiometric" Silicon Oxynitride Films

STUDY OF DEPOSITION CHARACTER OF SILICON OXYNITRIDE THIN FILMS PREPARED BY ATMOSPHERIC PRESSURE CVD

Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD

Effect of Nh3 Flow Rate on Growth, Structure and Luminescence of Amorphous Silicon Nitride Films by Electron Cyclotron Resonance Plasma

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Thin films of silicon nitride deposited at room temperature by non-reactive magnetron sputtering: radiofrequency power and deposition time influence on the formation of α-Si3N4 and its optical properties

Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors

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Growth Optimization of Low-Pressure Chemical Vapor Deposition Silicon Nitride Film

Thermal Atomic Layer Deposition of Silicon Carbonitride: A Density Functional Theory Study

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Nitridation Of Silicon With Ammonia And Nitrogen

Study of the Growth of Thin Nitride Films under Low-Energy Nitrogen-Ion Bombardment

Processing and Characterisation of PECVD Silicon Nitride Films

Microstructures and Optical Properties of SiNx Films

Angle-Resolved X-ray Photoelectron Spectroscopy intensity modeling of SiN x ultrathin layer grown on Si (100) and Si (111) substrates by N 2 plasma treatment

Spectra Characterization of Silicon Carbonitride Thin Films by Reactive Radio Frequency Sputtering

Silicon oxynitride thin films by plasma-enhanced atomic layer deposition using a hydrogen-free metal-organic silicon precursor and N 2 plasma

Deposition of Silicon Carbon Nitride Film on Si (100) Substrates

Nitride Films Deposited from an Equimolar Al–Cr–Mo–Si–Ti Alloy Target by Reactive Direct Current Magnetron Sputtering