Abstract:Low-k SiONC thin films with excellent thermal stabilities were deposited using plasma-assisted molecular layer deposition (PA-MLD) with a tetraisocyanatesilane (Si(NCO)4) precursor, N2plasma, and phloroglucinol (C6H3(OH)3). By adjusting the order of the N2plasma exposure steps within the PA-MLD process, we successfully developed a deposition technique that allows accurate control of thickness at the Ångström level via self-limiting reactions. The thicknesses of the thin films were measured through spectroscopic ellipsometry (SE). By tuning the N2plasma power, we facilitated the formation of -NH2sites for phloroglucinol adsorption, achieving a growth per cycle of 0.18 Å cycle-1with 300 W of N2plasma power. Consequently, the thickness of the films increased linearly with each additional cycle. Moreover, the organic linkers within the film formed stable bonds through surface reactions, resulting in a negligible decrease in thickness of approximately -11% even upon exposure to a high annealing temperature of 600 °C. This observation was confirmed by SE, distinguishing the as-prepared film from previously reported low-k films that fail to maintain their thickness under similar conditions. X-ray photoelectron spectroscopy (XPS) and current-voltage (I-V) and capacitance-voltage (C-V) measurement were conducted to evaluate the composition, insulating properties, and dielectric constant according to the deposition and annealing conditions. XPS results revealed that as the plasma power increased from 200 to 300 W, the C/Si ratio increased from 0.37 to 0.67, decreasing the dielectric constant from 3.46 to 3.12. Furthermore, there was no significant difference in the composition before and after annealing, and the hysteresis decreased from 0.58 to 0.19 V owing to defect healing, while maintaining the leakage current density, breakdown field, and dielectric constant. The low dielectric constant, accurate thickness control, and excellent thermal stability of this MLD SiONC thin film enable its application as an interlayer dielectric in back-end-of-line process.

Silicon oxynitride thin films by plasma-enhanced atomic layer deposition using a hydrogen-free metal-organic silicon precursor and N 2 plasma

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Properties of plasma-deposited amorphous SiO2 films

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Synthesis of low-k SiONC thin films by plasma-assisted molecular layer deposition with tetraisocyanatesilane and phloroglucinol

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

Room-temperature deposition of low H-content SiNx/SiNxOy thin films using a specially designed PECVD system

Structural Evolution of Nanocrystalline Silicon Thin Films Synthesized in High-Density, Low-Temperature Reactive Plasmas

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Rapid, Low-Temperature Synthesis of Nc-Si in High-Density, Non-Equilibrium Plasmas: Enabling Nanocrystallinity at Very Low Hydrogen Dilution

Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma

A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

Measurements Of Microstructural, Chemical, Optical, And Electrical Properties Of Silicon-Oxygen-Nitrogen Films Prepared By Plasma-Enhanced Atomic Layer Deposition

Low Temperature SiNx:H Films Deposited by Inductively Coupled Plasma for Solar Cell Applications

Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition

Stability of SiNx Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Improved Formation of Silicon Dioxide Films in Liquid Phase Deposition