Abstract:We investigated the growth mechanism of SiO x N y films deposited via plasma-enhanced atomic layer deposition at low temperatures (100–300 °C) using a tetraisocyanate silane (Si(NCO) 4 ) precursor and N 2 plasma. By using tetraisocyanate silane, which does not contain hydrogen, we were able to deposit SiO x N y with notably less hydrogen, around 3–5%, compared to using silicon precursors that contain hydrogen. Additionally, the precursor ligands, including oxygen, react with surface amine groups (-NH 2 ) to form Si – N –O bonds. Therefore, by understanding the adsorption mechanism of the precursor and controlling the temperature that can affect the bond formation, we can successfully produce SiO x N y films without any oxidizing source. We utilized density functional theory to explore the adsorption mechanism during the deposition of SiO x N y films and proposed a possible adsorption pathway of the precursors and by-products on the surface. We also employed various characterization techniques, such as spectroscopic ellipsometry, X-ray photoelectron spectroscopy, X-ray reflectometry, secondary ion mass spectroscopy, and current-electric field and capacitance-voltage analyses to establish correlations between the composition and dielectric properties of the thin films. Increasing the deposition temperature results in an increased presence of stronger and more stable Si –N bonds compared to Si –O and O –N bonds. As a result, the dielectric constant of the SiO x N y film increased from 5.8 to 7.4, while the leakage current density decreased from 1.52 × 10 −8 A/cm 2 to 8.56 × 10 −10 A/cm 2 . Additionally, the counterclockwise hysteresis decreased from 0.16 V to 0.07 V as the amount of hydrogen in the SiO x N y film decreased. This can be interpreted as a reduction in hydrogen impurities, which act as charge trapping sites within the film, leading to a decrease in hysteresis with increasing temperature.

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Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride