Abstract:With their excellent mechanical, thermal, and optical properties, silicon nitride (SiNx) films are widely used as both supporting and insulating materials for MEMS structures. Practical applications of SiNx films rely on their film quality, which will affect the performance and stability of the related devices. In general, SiNx films are deposited by low pressure chemical vapor deposition (LPCVD) or high-frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). However, up to now, less reports about the deposition of SiNx films by low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) have been made. This paper reports the preparation of SiNx thin films by PECVD with a low frequency (380 kHz). The process parameters were carefully optimized for the growth of SiNx films. And the thicknesses and refractive indices of SiNx films were characterized by spectroscopic ellipsometry with small mean square error (MSE<2.5) using Tauc-Lorentz fitting model. It was revealed that the thickness uniformity, deposition rate, and wet etching rate of the as-prepared SiNx films strongly depend on the key process parameters, including RF frequency, power, gas flow ratio, deposition temperature and pressure. Our results also indicated that the refractive index of SiNx film can be rationally tuned to be 1.874 ~ 2.145 by LF-PECVD. Moreover, the wet etching rate of SiNx film in a diluted HF solution can be controlled to be 7.4 to 65.9 nm/min, and the deposition rate ranges from 23.5 to 260.8 nm/min. We also experimentally confirmed that the SiNx thin films deposited with low frequency (380 kHz) exhibit better thickness uniformity, higher deposition rate and lower wet etching rate, compared with those deposited with high frequency (13.56 MHz). Particularly, 150-mm-diameter SiNx thin films with high thickness uniformity (thickness nonuniformity <1.0%) were successfully produced in this work. With their tunable physical properties, the LF-PECVD SiNx thin films exhibit great potential in microelectronics and optoelectronics applications. Moreover, the SiNx films prepared by LF-PECVD are compared with those produced by HF-PECVD and DF-PECVD.

Electronic Properties of the Ultrathin Silicon Nitride Films Fabricated with Ammonia Plasma Prenitridation

Interface Properties of Silicon Nitride Thin Films As Gate Insulator Layer for P-Si Thin Film Transistor

Effect of High Deposition Rate on Chemical Bonds and Properties of SiN Film

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Influence of PECVD Process Parameters on the Etching Rate of SiN X Films

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Influence of PECVD process on the etching rate of SiNx films

Deposition and Characterization of Ammonia-free PECVD Silicon Nitride

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Effect of the Nitrogen Incorporation on the Microstructure and Photoelectric Properties of N Type Nanocrystalline Silicon Thin Films.

Chemical control of physical properties in silicon nitride films

Research on Nitride Membranes Grown by PECVD

Microstructures and Optical Properties of SiNx Films

Processing and Characterisation of PECVD Silicon Nitride Films

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Effects of Nitrogen Impurities on the Microstructure and Electronic Properties of P-Doped Si Nanocrystals Emebedded in Silicon-Rich Sinx Films

Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD

Room-temperature deposition of low H-content SiNx/SiNxOy thin films using a specially designed PECVD system

High-quality Silicon Nitride Films Prepared by Low-Frequency Plasma-Enhanced Chemical Vapor Deposition