Abstract:Publication date: 30 August 2021 Source: Solid State Phenomena Vol. 323 Author(s): Jia Xin Sun, Bing Qing Zhou, Xin Gu Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

Effect of Nh3 Flow Rate on Growth, Structure and Luminescence of Amorphous Silicon Nitride Films by Electron Cyclotron Resonance Plasma

Effect of the Nitrogen Incorporation on the Microstructure and Photoelectric Properties of N Type Nanocrystalline Silicon Thin Films.

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Microstructures and Optical Properties of SiNx Films

Silicon nitride films deposited from SiH2Cl2NH3 by low pressure chemical vapor deposition: kinetics, thermodynamics, composition and structure

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

High-quality AlN growth: a detailed study on ammonia flow

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Nitridation Of Silicon With Ammonia And Nitrogen

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

Annealing effect on structures and luminescence of amorphous SiN films

Structural evolution of SiNx films deposited by ECR and its light emission

Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Improved Photoluminescence of Silicon Nanocrystals in Silicon Nitride Prepared by Ammonia Sputtering

Structure Of Nc-Si : H Films

Density Functional Theory Study of the Structural and Electronic Properties of Amorphous Silicon Nitrides: Si3N4−x:H

Thin films of silicon nitride deposited at room temperature by non-reactive magnetron sputtering: radiofrequency power and deposition time influence on the formation of α-Si3N4 and its optical properties