Effect of Nh3 Flow Rate on Growth, Structure and Luminescence of Amorphous Silicon Nitride Films by Electron Cyclotron Resonance Plasma
Y. Xin,Y. Shi,H. Liu,Z. X. Huang,L. Pu,R. Zhang,Y. D. Zheng
DOI: https://doi.org/10.1016/j.tsf.2007.05.046
IF: 2.1
2008-01-01
Thin Solid Films
Abstract:In this paper, hydrogenated amorphous silicon nitride (a-SiNx:H) films have been deposited using an electron cyclotron resonance chemical vapor deposition system. The effect of NH3 flow rate R on the deposition rate, structure and luminescence were studied using various techniques such as optical emission spectroscopy, Fourier Transform Infrared absorption (FTIR), X-ray photoelectron spectroscopy (XPS) and fluoro-spectroscopy, respectively. Optical emission behavior of SiH4+NH3 plasma shows that atomic Si radical concentration determines the film deposition rate. Structural transition of a-SiNx film from Si-rich one to near-stoichiometric/N-rich one with R was revealed by FTIR and the two phase separation of a-Si and a-Si3N4 was also convinced in Si-rich SiNx films by XPS. Either photo- or electroluminescence for all the SiNx films with R>3 sccm shows a strong light emission in visible light wavelength range. As R<6 sccm, recombination of electrons and holes in a-Si quantum dots is the main mechanism of photo/electroluminescence for Si-rich SiNx films, however, for photoluminescence, gap states' luminescence is also in competition; as R>6 sccm, light emission of the SiNx film originates from defect states in its band gap.