Abstract:Silicon nitride (SiNx) thin films, owing to their high hardness and great insulation performance, show a great prospect for application in smart temperature-measurement tools. However, their properties depend on the deposition conditions, and the high temperatures during cutting process affects the insulation function of these films. In the current work, SiNx thin films were prepared on YG8 cemented carbide by middle-frequency magnetron sputtering technology. Stylus profiler, atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscope (SEM), and electrochemical analysis tester were applied to investigate the influence of various sputtering currents on microstructure, chemical composition, and electrical properties of SiNx thin films. The results revealed the amorphous structure of SiNx thin films. The sputtering current showed the impetus effect on the deposition rate and roughness of the films. As the sputtering current increased, the isolated islands, initially formed on the carbide substrates, transformed into the uniform and dense film structure. High sputtering current was conducive to the dissociation of N2 and to the formation of the SiNx phase in the films. Finally, annealing at 500 °C caused the failure of Si-N bonds in the film, which deteriorated the insulation performance of the latter at high temperatures at high temperatures.

Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target

Spectra Characterization of Silicon Carbonitride Thin Films by Reactive Radio Frequency Sputtering

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Thin films of silicon nitride deposited at room temperature by non-reactive magnetron sputtering: radiofrequency power and deposition time influence on the formation of α-Si3N4 and its optical properties

Influence of Sputtering Process on the Deposition and Optical Properties of Sicn Films

Optical & Electronic Properties of Carbon Nitride Thin Films

Preparation And Characterization Of Silicon Carbide Thin Films Synthesized By Rf-Reactive Sputtering

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Structures and bonding properties of carbon nitride films prepared by radio frequency magnetron sputtering

Preparation of Crystalline Carbon Nitride Films on Silicon Substrate by Chemical Vapor Deposition

Influences of Gas Flow Ratio and Substrate Temperature on the Characteristics of Silicon Nitride Films Prepared by Low-frequency PECVD Technology

Mechanical Properties of Silicon Carbonitride Thin Films

Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma

Study of the Growth of Thin Nitride Films under Low-Energy Nitrogen-Ion Bombardment

Effect of High Deposition Rate on Chemical Bonds and Properties of SiN Film

Influences of different sputtering current on the microstructure and electrical properties of silicon nitride thin films deposited on cemented carbide tools

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Investigation of Amorphous-Sic Thin Film Deposition by RF Magnetron Sputtering for Optical Applications

Characteristics of Carbon Nitride Films Synthesized by Single-Source Ion Beam Enhanced Deposition System

Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering

Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target