Abstract:Silicon carbonitride thin films were synthesized on single-crystal Si(100) substrates by reactive rf sputtering a SiC target in nitrogen and argon mixture gas (1:4) and a Si3N4 target in methane and argon mixture gas (1:5 and 1:8), respectively. The effect of target voltage on chemical composition and bonding configuration of thin films were studied. Auger electron spectra confirmed the presence of Si, C, N, and O elements in the deposited films. With the assumption that the absorption coefficient of each band was constant within the range of the film composition in question, Fourier-transform infrared spectra measurement showed qualitatively the dependence of the bonding configuration on the plasma energy. X-ray photoelectron spectroscopy analysis showed the formation of a complex network among Si, C, and N elements with more complicated atomic chemical environments than that in a mixture of pure phases, a clear correlation of binding energy and intensity of fitted features of Si 2p, C 1s, N 1s, and O 1s peaks on the target voltage. Spectra analysis reflected that the incorporation of carbon into silicon nitride and the tetrahedral carbon species (sp3 including C–C and C–N species) was enhanced by increasing the target voltage. The results demonstrated that the bonding configuration and chemical composition could be tailored by adjusting the plasma energy.

Preparation And Characterization Of Silicon Carbide Thin Films Synthesized By Rf-Reactive Sputtering

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Spectra Characterization of Silicon Carbonitride Thin Films by Reactive Radio Frequency Sputtering

Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Mechanical Properties of Silicon Carbonitride Thin Films

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Preparation of Si–C–H thin films embedded with high oriented (100) polycrystalline silicon

Preparation of Nanocrystalline Silicon Carbide Films with High Seebeck Coefficient and Low Resistivity

Measurement and Analysis on the Mechanical Properties of Silicon Carbide Film

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Investigation of PECVD SiC nano film

Characterization of Silicon Carbide Grown on Rb-Sic by Chemical Vapor Deposition

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method