Abstract:This document describes a proprietary design, construction, programming and testing of a low-cost pulsed high-voltage direct current (HVDC) power supply with an output of 430 V and power of 25 W. The design obtained allows costs to be reduced compared to commercial ones, highlighting that the manufacturing of this HVDC is easy to replicate. To demonstrate the operation of the pulsed power supply prototype, coatings of silicon carbide (SiC) and SiC mixed with graphite (C) and/or alumina (Al2O3) were made using the electrophoretic deposition (EPD) method. After processing, samples underwent a heat treatment at 500 °C to evaluate their thermoelectric (TE) efficiency. The samples were analysed via X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, Seebeck coefficient, electrical conductivity and thermal conductivity. The Seebeck coefficient, electrical conductivity and thermal conductivity were measured in a temperature range of 100–500 °C in a nitrogen (N2) atmosphere. The electrical conductivity of the SiC 6C-4Al sample was 0.65 S/cm at 500 °C, while the maximum Seebeck coefficient was 2500 μV/K of the SiC 6C-4Al sample at 200 °C. The thermal conductivity of SiC 6C-4Al was in the range of 0.35–0.37 W/m·K, which was much lower than the SiC sample free of alumina and graphite in the same measured temperature range. In conclusion, the SiC 6C-4Al sample presented the highest figure of merit with a ZT ≈ 0.01.

Preparation of Nanocrystalline Silicon Carbide Films with High Seebeck Coefficient and Low Resistivity

PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

SEEBECK EFFECT OF NANO-SCALE P-TYPE SILICON FILMS ABOVE ROOM TEMPERATURE

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Thermoelectric effect of silicon films prepared by aluminum-induced crystallization

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Preparation And Characterization Of Silicon Carbide Thin Films Synthesized By Rf-Reactive Sputtering

Thermoelectric Effect of Silicon Films with Shallow- and Deep-Level Acceptors

Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature

Fabrication and Characterization of High Density Silicon Quantum Dots in Gradient Si-Rich Carbide Films

Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Design, Construction and Programming of a Low-Cost Pulsed High-Voltage Direct Current Power Supply for the Electrophoretic Deposition of Silicon Carbide Mixed with Graphite and/or Alumina for Thermoelectric Applications

SiC Nanowire-Induced Fabrication of Fine-Grained and Highly-Density SiC Coating by Pressure-Less Reactive Sintering

Opto-electrical properties of amorphous silicon carbide thin films adjustably prepared by magnetron sputtering at room temperature

Magnetic Properties of Al-Sic Co-Sputtered Films Grown by Radio Frequency Sputtering

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method

INFLUENCE OF SILICON ADDITION ON SEEBECK COEFFICIENT OF MnSi1.7 FILMS