INFLUENCE OF SILICON ADDITION ON SEEBECK COEFFICIENT OF MnSi1.7 FILMS

Q. R. Hou,B. F. Gu,Y. B. Chen,Y. J. He

DOI: https://doi.org/10.1142/s0217979211101594

2011-01-01

Abstract:MnSi1.7 films with different thicknesses (16-242 nm) are prepared by magnetron sputtering and electron beam evaporation. When the MnSi1.7 flint thickness is about 40 nm or above, MnSi1.7 films are p-type in the whole temperature range (300-700 K) in agreement with reports in literature. By co-sputtering of MnSi1.85 and silicon targets or deposition of Si/Mn multi-layers with a larger thickness ratio, silicon is added to the films and the Seebeck coefficients transform from positive to negative with increasing temperature. The Seebeck coefficients at room temperature and 633 K are +0.098 mV/K and -0.358 mV/K, respectively. By reducing the MnSi1.7 film thickness to 27 nm, the transition of Seebeck coefficient from positive to negative is also observed although silicon is not added intentionally. When an ultra-thin aluminum layer is deposited between MnSix (x < 1.7) and Si layers to enhance silicon diffusion, the p- to n-type transition temperature decreases about 100 K. The silicon-added MnSi1.7 films usually have higher electrical resistivity.