Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Latest development of MnSi1.7 semiconducting films

Latest Development of MnSi1.7 Semiconducting Films

PREPARATION OF N-TYPE HIGHER MANGANESE SILICIDE FILMS BY MAGNETRON SPUTTERING

Preparation of n-type nano-scale MnSi1.7 films by addition of iron

INFLUENCE OF SILICON ADDITION ON SEEBECK COEFFICIENT OF MnSi1.7 FILMS

Enhancement Of Thermoelectric Power Factor Of Mnsi1.7 Films By Si Addition And Modulation Doping

Thermoelectric Power of Nanoscale Mnsi1.7 Films

Research Progress on the Improvement of Thermoelectric Properties of Mg2Si-based Materials

Layer-by-layer Deposition of MnSi1.7 Film with High Seebeck Coefficient and Low Electrical Resistivity

Preparation of Mn - Si Compound and Its Seebeck Effect

Making ferromagnetic metal MnSi ultrathin films semiconductor

Thermoelectric Properties of P‐type Higher Manganese Silicide Films Prepared by Solid Phase Reaction and Reactive Deposition

PREPARATION AND CHARACTERIZATION OF MnSi1.7 THIN FILMS

Structural Study of Mnxsi1-X Magnetic Semiconductor Thin Films

Investigation on the Magnetic and Electrical Properties of Crystalline Mn0.05si0.95 Films

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Nanostructured Sb2Te3 films composited with Bi2S3 for p–n conduction type conversion

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Ultrafast Dynamics of MnSi1.7 Film Studied by Pump–probe Technique

High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

Si-Based Materials for Thermoelectric Applications